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| FMS7G10US60 Compact & Complex Module August 2005 FMS7G10US60 Compact & Complex Module Features * Short Circuit Rated 10s @ TC = 100C, VGE = 15V * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 10A * High Input Impedance * Built in Brake & 3 Phase Rectifier Circuit * Fast & Soft Anti-Parallel FWD * Built-in NTC Thermistor Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. Applications * AC & DC Motor Controls * General Purpose Inverters * Robotics * Servo Controls 4 5 21 19 17 22 23 24 25 20 18 13 16 14 15 1 8 9 7 10 3 2 6 11 NTC 12 Package Code : 25PM-AA Internal Circuit Diagram (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FMS7G10US60 Rev. B1 FMS7G10US60 Compact & Complex Module Absolute Maximum Ratings Symbol Inverter & Brake VCES VGES IC ICM (1) IF IFM PD TSC Converter VRRM IO IFSM I2t Common TJ TSTG VISO Mounting Torque Notes : TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive Energy pulse @ 1Cycle at 60Hz Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4 @ TC = 25C @ TC = 100C @ TC = 80C @ TC = 80C FMS7G10US60 600 20 10 20 10 20 66 10 1600 10 100 42 -40 to +150 -40 to +125 2500 2.0 Units V V A A A A W s V A A A2s C C V N*m (1) Repetitive rating : Pulse width limited by max. junction temperature Package Marking and Ordering Information Device Marking FMS7G10US60 Device FMS7G10US60 Package 25PM-AA Reel Size -- Tape Width -- Quantity -- (2) TMC2 Relibility test was done under -45C ~ 125C FMS7G10US60 Rev. B1 2 www.fairchildsemi.com FMS7G10US60 Compact & Complex Module Electrical Characteristics of IGBT @ Inverter Symbol Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250A VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ---- -0.6 --- --250 100 V V/C A nA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 10mA, VCE = VGE IC = 10A, VGE = 15V 5.0 -6.5 2.1 8.5 2.7 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---710 57 12 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, VGE = 15V @ TC = 100C VCE = 300 V, IC = 10A, VGE = 15V VCC = 300 V, IC = 10A, RG = 20, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, IC = 10A, RG = 20, VGE = 15V, Inductive Load, TC = 25C ------------10 ---65 65 80 100 0.15 0.2 70 60 90 200 0.16 0.3 -35 8 12 130 130 160 200 --140 120 180 350 ---50 15 20 ns ns ns ns mJ mJ ns ns ns ns mJ mJ s nC nC nC FMS7G10US60 Rev. B1 3 www.fairchildsemi.com FMS7G10US60 Compact & Complex Module Electrical Characteristics of DIODE @ Inverter Symbol VFM trr Irr Qrr TC = 25C unless otherwise noted Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Test Conditions IF = 10A IF = 10A di / dt = 20 A/s TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C Min. --------- Typ. 1.9 2.0 85 110 0.7 1.0 30 55 Max. 2.8 -150 -1.4 -105 -- Units V ns A nC Electrical Characteristics of DIODE @ Converter TC = 25C unless otherwise noted Symbol VFM IRRM Parameter Diode Forward Voltage Repetitive Reverse Current Test Conditions IF = 10A VR = VRRM TC = 25C TC = 100C TC = 25C TC = 100C Min. ----- Typ. 1.1 1.0 -5 Max. 1.5 -8 -- Units V mA Thermal Characteristics Symbol Inverter Brake Converter Weight RJC RJC RJC RJC RJC Parameter Junction-to-Case (IGBT Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Junction-to-Case (IGBT Part) Junction-to-Case (DIODE Part) Junction-to-Case (DIODE Part, per 1/6 Module) Weight of Module Typ. -----60 Max. 1.9 2.9 1.9 2.9 2.5 -- Units C/W C/W C/W C/W C/W g NTC Thermistor Characteristics Symbol Thermistor R25 B(25/100) B - Value Parameter Rated Resistance @ Tc = 25C Tol. +/- 5 % +/- 3 % Typ. 4.7 3530 Units K FMS7G10US60 Rev. B1 4 www.fairchildsemi.com FMS7G10US60 Compact & Complex Module Typical Performance Characteristics Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage Characteristics 30 15 V 12 V 25 Common Emitter VGE = 15 V TC = 25 TC = 125 ------ 40 35 30 Common Emitter TC = 25 C o 20 V [A] [A] C o ll e c t o r C u r r e n t , I C 25 20 15 V GE 20 15 10 5 0 C o ll e c t o r C u r r e n t , I C = 10 V 10 5 0 0 2 4 6 CE 8 1 10 CE C o ll e c t o r - E m it t e r V o lt a g e , V [V] C o ll e c t o r - E m it t e r V o lt a g e , V [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 4.0 Figure 4. Transient Thermal Impedance 10 3.5 3.0 2.5 C E (s at) Common Emitter VGE = 15 V [V] 20 A Thermal Response, Zthjc [/W] C o ll e c t o r - E m it t e r V o lt a g e , V FRD 1 IG BT 10 A 2.0 1.5 1.0 -50 0 50 C 0.1 I C =5A Sin gle P uls e (T h er m al R e s p o n s e) 0.01 10 -5 -4 -3 -2 -1 0 1 100 150 10 10 10 10 10 10 C ase T e m p erature, T [oC ] Rectangular Pulse Duration [sec] Figure 5. Saturation Voltage vs. VGE 20 Common Emitter TC = 25 Figure 6. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 [V] C E ( s a t) C o ll e c t o r - E m itt e r V o lt a g e , V 12 C o ll e c t o r - E m itt e r V o lt a g e , V C E ( s a t) 16 [V] 16 12 8 8 4 I C = 5A 10A 20A 4 I C 10A = 5A 20A 0 0 4 8 12 GE 0 0 4 8 12 GE 16 20 16 20 G a t e - E m itt e r V o lt a g e , V [V] G a t e - E m itt e r V o lt a g e , V [V] FMS7G10US60 Rev. B1 5 www.fairchildsemi.com FMS7G10US60 Compact & Complex Module Typical Performance Characteristics Figure 7. Capacitance Characteristics 1600 1400 1200 Cie s Common Emitter VGE = 0 V, f = 1 MHz TC = 25 C o (Continued) Figure 8. Turn-On Characteristics vs. Gate Resistance 1000 Common Emitter VCC = 300 V, VGE = 15 V IC = 10 A TC = 25 TC = 125 ------ C a p a c it a n c e [ p F ] 1000 800 600 400 200 0 0.1 S w it c h i n g T i m e [ n s ] Coes Ton Cres 100 Tr 1 10 CE 20 40 60 80 100 G 120 140 C o ll e c t o r - E m it t e r V o lt a g e , V [V] G ate R e sista n c e, R [ ] Figure 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter VCC = 300 V, VGE = 15 V IC = 10 A TC = 25 TC = 125 ------ Figure 10. Switching Loss vs. Gate Resistance 1000 1000 S w it c h i n g T i m e [ n s ] S w it c h i n g l o s s [ u J ] Common Emitter VCC = 300 V, VGE = 15 V IC = 10 A TC = 25 TC = 125 ------ E o ff Eon E o ff 100 T o ff Tf 100 Tf 20 40 60 80 100 G 120 140 20 40 60 80 100 120 140 G ate R e sista n c e, R [ ] G ate R e sista n c e, R G [ ] Figure 11. Turn-On Characteristics vs. Collector Current Figure 12. Turn-Off Characteristics vs. Collector Current 1000 Common Emitter VGE = 15 V, RG = 20 TC = 25 TC = 125 ------ 1000 Common Emitter VGE = 15 V, RG = 20 TC = 25 TC = 125 ------ S w it c h i n g T i m e [ n s ] S w it c h i n g T i m e [ n s ] Ton 100 Tr T o ff Tf T o ff 100 Tf 5 10 15 C 20 5 10 15 C 20 C o ll e c t o r C u r r e n t , I [A] C o ll e c t o r C u r r e n t , I [A] FMS7G10US60 Rev. B1 6 www.fairchildsemi.com FMS7G10US60 Compact & Complex Module Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics 15 V = 100 V CC S w it c h i n g L o s s [ u J ] G a t e - E m itt e r V o lt a g e , V 1000 Common Emitter VGE = 15 V, RG = 20 TC = 25 TC = 125 ------ [V] 12 Common Emitter RL = 30 TC = 25 C o 300 V 200 V GE E o ff Eon E o ff 9 6 100 3 0 5 10 15 C 20 0 5 10 15 20 g 25 30 35 40 C o ll e c t o r C u r r e n t , I [A] G ate C h arg e, Q [nC] Figure 15. SOA Characteristics 100 Figure 16. RBSOA Characteristics 50 IC MAX. (Pulsed) [A] 100us 1ms C C o ll e c t o r C u r r e n t , I 1 DC Operation Collector Current, I C [A] 10 IC MAX. (Continuous) 50us 10 1 0.1 0.0 1 0.1 Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 1 10 100 1000 0.1 Single Nonrepetitive Pulse TJ 125 VGE = 15V RG = 20 0 100 200 300 400 500 600 700 C o ll e c t o r - E m it t e r V o lt a g e , V CE [V] Collector-Emitter Voltage, VCE [V] Figure 17. Forward Characteristics 40 35 30 25 20 15 10 5 0 0 1 2 3 4 Figure 18. Reverse Recovery Characteristics 20 Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [x10ns] Common Cathode VGE = 0V T C = 25 T C = 125 10 T rr Forward Current, I F [A] 1 Irr Common Cathode di/dt = 20A/ T C = 25 T C = 100 --------- 0.1 2 4 6 8 10 12 Forward Voltage, VF [V] Forward Current, IF [A] FMS7G10US60 Rev. B1 7 www.fairchildsemi.com FMS7G10US60 Compact & Complex Module Typical Performance Characteristics (Continued) Figure 19. Rectifier (Converter) Characteristics 1000 100 Figure 20. Rectifier (Converter) Characteristics 100 In s t a n t a n e o u s F o r w a r d C u rr e n t, I F [A] [uA] 10 1 0.1 0.0 1 1E-3 0 400 800 R T C = 125 o C 10 T C = 125 o C 25 o C R e v e r s e C u rr e n t, I R 25 o C 1 0.1 0.4 0.6 0.8 1.0 F 1200 1600 1.2 1.4 R e v e r s e V o lt a g e , V [V] I n s t a n t a n e o u s V o lt a g e , V [V] Figure 21. NTC Characteristics 16 12 R e sista n c e, R [ K 8 4 0 0 25 50 75 100 125 ] Te m p erature, T [oC ] FMS7G10US60 Rev. B1 8 www.fairchildsemi.com FMS7G10US60 Compact & Complex Module Mechanical Dimensions 25PM-AA -. Pin Coordinate Pin #No Coordinate x 0.0 -3.0 -6.0 -13.0 -18.0 -25.0 -29.0 -32.0 -35.0 -38.0 -46.5 -49.5 -49.5 -49.5 -49.5 -32.0 -29.0 -23.0 -20.0 -14.0 -11.0 3.5 3.5 3.5 3.5 y 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 11.5 20.0 28.0 28.0 28.0 28.0 28.0 28.0 28.0 28.0 20.0 11.5 5.5 Name Plate 1 2 3 82.2 0.20 4- O6.0 4- O2.0 0.10 Dp 4 5 6 71.0 -0.10 6.0 +0.20 57.0 0.20 2- O4.3 -0.00 Mounting-Hole +0.20 7 8 9 10 11 15 22 37.9 0.20 17.5 0.20 30.8 -0.10 +0.20 12 1 12 14.00.15 13 14 15 16 17 18 19 20 21 4.30.20 5.1 -0.10 +0.20 O1.00.05 +0.20 16.7 -0.10 4.30.20 23.00.15 21.0 0.20 11.2 -0.10 +0.20 16.3 -0.10 3.2 -0.10 +0.20 +0.20 22 23 24 25 * datum pin : #1 * Pin Tilt : 0.15 Dimensions in Millimeters FMS7G10US60 Rev. B1 9 www.fairchildsemi.com FMS7G10US60 Compact & Complex Module TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 10 FMS7G10US60 Rev. B1 www.fairchildsemi.com |
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